IRF1010E N-Channel Power MOSFET

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UGX8,000

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Overview
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The IRF1010E is a type of N-Channel Enhancement MOSFET that stands out in the world of electronic components. This comprehensive overview aims to explore the intricacies of the IRF1010E, offering insights into its usage and technical specifications. Various components such as semiconductors, capacitors, resistors, and ICs are ubiquitous, each playing unique and roles. Among these, N-Channel Enhancement MOSFETs like the IRF1010E contribute to the efficiency and reliability of numerous electronic circuits. Their extensive applications span power management systems, automotive technology, and various switching operations.

Specifications:

· Advanced process technology

· Fully avalanche rated

· Fast switching

· Fifth generation HEXFET

· Maximum voltage across DRAIN and SOURCE: 60V

· Maximum continuous current allowed trough DRAIN: 81A

· Maximum pulsed DRAIN current: 330A

· Maximum voltage across GATE and SOURCE:20 V

· Maximum operating Temperature: 175ºC

· Maximum power dissipation: 170Watt